We present a test chip for the direct measure of the effects of inter/intra-chip process variations on the performance of CMOS circuits. The test structure is a ring oscillator made of modified CMOS inverters that may exhibit two slightly different delays depending on the value of a digital control signal. The incremental delay of each cell is measured from the oscillation periods obtained with different configurations of the control bits. Results are reported for different lots of a 0.18μm process.

Measuring the effects of process variations on circuit performance by means of digitally-controllable ring oscillators

BOGLIOLO, ALESSANDRO
2003

Abstract

We present a test chip for the direct measure of the effects of inter/intra-chip process variations on the performance of CMOS circuits. The test structure is a ring oscillator made of modified CMOS inverters that may exhibit two slightly different delays depending on the value of a digital control signal. The incremental delay of each cell is measured from the oscillation periods obtained with different configurations of the control bits. Results are reported for different lots of a 0.18μm process.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11576/1891658
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